Investigation of 300mm Process SiMOS Spin Qubit Device Uniformity with Automated Cryogenic Probing

IEEE
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Published in IEEE 2025 IEDM

Marco Candido, Ensar Vahapoglu, Juan Pablo Dehollain, Kevin Simoes, Hyma Harish Vallabhapurapu, Kok Wai Chan, Tuomo Tanttu, Paul Steinacker, Will Gilbert, Santiago Serrano, Fay E. Hudson, Thomas Ohki, David Reilly, Chih Hwan Yang, Andre Saraiva, Christopher C. Escott, Arne Laucht, Wee Han Lim, Andrew S. Dzurak & Nard Dumoulin Stuyck

Abstract

Industrial foundry processing of semiconductor spin qubits has revolutionized the scale and yield of quantum processors fabrication, which in turn enables the use of data-driven process optimization and device screening. This requires high-throughput electrical characterization at cryogenic temperatures with complex measurement protocols. Here, we present an investigation of the performance of SiMOS based spin qubit devices made in an optimized 300mm process flow. We showcase how the qubit device uniformity allows efficient characterization using a die-scale cryogenic prober at an effective electron temperature (Te,eff) of 0.8 ± 0.2 K, which is below the temperature threshold for high-fidelity qubit operation. We leverage machine learning for autotuning the devices and extract key metrics for charge sensor and quantum dot performance for 16 double-dot devices. Our results enable further process optimization as well as variability-aware design of larger SiMOS spin qubit processors.

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