Enhancement of electric drive in silicon quantum dots with electric quadrupole spin resonance
Published in Physical Review Research
Philip Y. Mai, Pedro H. Pereira, Lucas Andrade Alonso, Ross C. C. Leon, Chih Hwan Yang, Jason C. C. Hwang, Daniel Dunmore, Julien Camirand Lemyre, Tuomo Tanttu, Wister Huang, Kok Wai Chan, Kuan Yen Tan, Jesús D. Cifuentes, Fay E. Hudson, Kohei M. Itoh, Arne Laucht, Michel Pioro-Ladrière, Christopher C. Escott, Andrew Dzurak, Andre Saraiva, Reinaldo de Melo e Souza, and MengKe Feng
Abstract
Quantum computation with electron spin qubits requires coherent and efficient manipulation of these spins, typically accomplished through the application of alternating magnetic or electric fields for electron spin resonance. In particular, electrical driving allows us to apply localized fields on the electrons, which benefits scale-up architectures. However, we have found that Electric Dipole Spin Resonance is insufficient for modeling the Rabi behavior in recent experimental studies. Therefore, we propose that the electron spin is being driven by a method of electric spin qubit control that generalizes the spin dynamics by taking into account a quadrupolar contribution of the quantum dot: electric quadrupole spin resonance. In this work, we explore the electric quadrupole driving of a quantum dot in silicon, specifically examining the cases of 5 and 13 electron occupancies.
