Parallelization of charge-pumps in silicon for practical realization of the SI ampere


Published in IEEE 2024 CPEM


Ajit Dash, Steve Yianni, Jonathan Yue Huang, Santiago Serrano Ramirez, Fay E Hudson, Andrew S Dzurak, Tuomo Tanttu

Abstract

The direct realization of the ampere in the International System of Units is based on precise control of electron transport across a quantum dot to generate an accurate benchmark current. Practical implementation of this technology for dc-current metrology demands an output current of at least hundreds of microamperes within a relative uncertainty below sub-parts-per-million. Here, we propose a physical architecture of a cryogenic dc-source-module that incorporates several charge-pumps in parallel on a single-chip to potentially fulfill the metrological requirement. The total current produced by the dc-source-module is given by the summation of the quantized current collected from individual charge-pumps while transferring single-electrons per voltage cycle.

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